W4TXE0X-0D00的Datasheet、參數、電路圖、封裝、引腳圖、PDF資料

W4TXE0X-0D00中文資料

功能介紹中文 :

功能介紹英文 : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition